Fast 3D imaging of defects in semiconductor devices
During the manufacture of semiconductor devices such as Mosfetts it is essential to inspect the device for cracks and other damage. It is required to obtain 3D images at NIR wavelength for which the semiconductor is transparent. The images should have high resolution and should be acquired at high speed. This project is carried out in the framework of the TTW Perspective programme ADOPSYS, in collaboration with the company Nexperia.
Information: Jeroen Kalkman, Paul Urbach